GaAs Distributed Amplifier
SDA-2000 GaAs Distributed Amplifier
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Preliminary
SDA-2000
GaAs DISTRIBUTED AMPLIFIER
Die: 3.1mmx1....
Description
SDA-2000 GaAs Distributed Amplifier
www.DataSheet4U.com
Preliminary
SDA-2000
GaAs DISTRIBUTED AMPLIFIER
Die: 3.1mmx1.45mmx0.102mm
CONFIDENTIAL: NDA REQUIRED
Product Description
RFMD’s SDA-2000 is a directly coupled (DC) GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier die designed to support a wide array of high frequency commercial, military, and space applications. They are ideal for wideband amplifier gain blocks, modulators, clock drivers, broadband test equipment (ATE), Mach Zehnder Modulated (MZM) laser drivers, military, and aerospace applications.
Features
Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS
3 VG2 2 IN 1
4 OUT
9
ID EN TI AL :N DA
5 7 6
Parameter
Min.
DC 4
Specification Typ.
VTI
Max.
22
Unit
Electrical Specifications
Operating Frequency Gain Output Voltage IP3 at 10GHz P1dB at 10GHz PSAT at 10GHz
12
>8
38
GHz dB VP-P dBm
27 28
dBm dBm dB dB
CO NF
Noise Figure at Mid-Band 5.3 Input Return Loss 10 15 Output Return Loss 12 17 Supply Current 410 Supply Voltage 8 *Adjust VTI between -1.5VDC to +0.2VDC to achieve IDD =410mA typical.
mA VDC
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