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TC7SZ125AFE

Toshiba Semiconductor

CMOS Digital Integrated Circuit Silicon Monolithic

TC7SZ125AFE www.DataSheet4U.com TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ125AFE Dual Bus Buffer...


Toshiba Semiconductor

TC7SZ125AFE

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TC7SZ125AFE www.DataSheet4U.com TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ125AFE Dual Bus Buffer 3-State Output Features · · · · · · · High output drive: ±24 mA (min) @VCC = 3 V Super high speed operation: tpd 2.6 ns (typ.) @VCC = 5 V, 50pF Operation voltage range: VCC (opr) = 1.8~5.5 V Latch-up performance: ±500 mA or more ESD performance: ±200 V or more (JEITA) ±2000 V or more (MIL) Power down protection is provided on all inputs and outputs. Matches the performance of TC74LCX series when operated at 3.3 V VCC. Weight: 0.003 g (typ.) Marking Type name Pin Assignment (top view) G 1 5 VCC R B IN A 2 GND 3 4 OUT Y Maximum Ratings (Ta = 25°C) Characteristics Power supply voltage DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature Lead temperature (10s) Symbol VCC VIN VOUT IIK IOK IOUT ICC PD Tstg TL Rating -0.5~6 -0.5~6 -0.5~VCC + 0.5 -20 ±20 ±50 ±50 150 -65~150 260 Unit V V V mA mA mA mA mW °C °C 1 2002-01-16 TC7SZ125AFE www.DataSheet4U.com Truth Table A X L H G Logic Diagram Y G EN OUT Y H L L Z L H IN A Recommended Operating Conditions Characteristics Supply voltage Input voltage Output voltage Operating temperature Symbol VCC VIN VOUT Topr Rating 1.8~5.5 1.5~5.5 0~5.5 0~VCC -40~85 0~20 (VCC = 1.8 V, 2.5 V ± 0.2 V) Input rise and fall time dt/dv 0~10 (VCC = 3.3 V ± 0.3 V) 0~5 (VCC = 5.5 V ± 0.5 V) ns/V (Note) V V °C Unit V Note: Data ...




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