CMOS Digital Integrated Circuit Silicon Monolithic
TC7SZ125AFE
www.DataSheet4U.com
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SZ125AFE
Dual Bus Buffer...
Description
TC7SZ125AFE
www.DataSheet4U.com
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SZ125AFE
Dual Bus Buffer 3-State Output Features
· · · · · · · High output drive: ±24 mA (min) @VCC = 3 V Super high speed operation: tpd 2.6 ns (typ.) @VCC = 5 V, 50pF Operation voltage range: VCC (opr) = 1.8~5.5 V Latch-up performance: ±500 mA or more ESD performance: ±200 V or more (JEITA) ±2000 V or more (MIL) Power down protection is provided on all inputs and outputs. Matches the performance of TC74LCX series when operated at 3.3 V VCC. Weight: 0.003 g (typ.)
Marking
Type name
Pin Assignment (top view)
G
1
5 VCC
R B
IN A 2 GND 3 4 OUT Y
Maximum Ratings (Ta = 25°C)
Characteristics Power supply voltage DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature Lead temperature (10s) Symbol VCC VIN VOUT IIK IOK IOUT ICC PD Tstg TL Rating -0.5~6 -0.5~6 -0.5~VCC + 0.5 -20 ±20 ±50 ±50 150 -65~150 260 Unit V V V mA mA mA mA mW °C °C
1
2002-01-16
TC7SZ125AFE
www.DataSheet4U.com
Truth Table
A X L H
G
Logic Diagram
Y
G
EN OUT Y
H L L
Z L H IN A
Recommended Operating Conditions
Characteristics Supply voltage Input voltage Output voltage Operating temperature Symbol VCC VIN VOUT Topr Rating 1.8~5.5 1.5~5.5 0~5.5 0~VCC -40~85 0~20 (VCC = 1.8 V, 2.5 V ± 0.2 V) Input rise and fall time dt/dv 0~10 (VCC = 3.3 V ± 0.3 V) 0~5 (VCC = 5.5 V ± 0.5 V) ns/V (Note) V V °C Unit V
Note: Data ...
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