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SG23N06T

Sirectifier Semiconductors

Discrete IGBTs

www.DataSheet4U.com SG23N06T, SG23N06DT Discrete IGBTs Dimensions TO-247AD Dim. A B Millimeter Min. Max. 19.81 20.32 20...


Sirectifier Semiconductors

SG23N06T

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www.DataSheet4U.com SG23N06T, SG23N06DT Discrete IGBTs Dimensions TO-247AD Dim. A B Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 C(TAB) E C G G=Gate, C=Collector, E=Emitter,TAB=Collector C D E F G H J K L M N SG23N06T SG23N06DT Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA o o Test Conditions TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; Continuous Transient TC=25oC TC=90oC TC=25oC, 1 ms Maximum Ratings 600 600 ±20 ±30 48 23 96 ICM=48 @ 0.8 VCES 150 -55...+150 150 -55...+150 Unit V V A A W o VGE=15V; TVJ=125oC; RG=22 (RBSOA) Clamped inductive load; L=100uH PC TC=25oC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Md Weight Mounting torque C 300 o C 1.13/10 6 Nm/Ib.in. g (TJ=25oC, unless otherwise specified) Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions IC=250uA; VGE=0V IC=250uA; VCE=VGE VCE=0.8VCES; VGE=0V; TJ=25 C TJ=150 C 2.1 o o Characteristic Values min. 600 2.5 5.0 200 1 ±100 2.5 typ. max. Unit V V uA mA nA V VCE=0V; VGE=±20V IC=IC90; VGE=15V www.DataSheet4U.com SG23N06T, SG23N06DT Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min. typ. 17 max. Unit gts IC=IC90; VCE=10V Pulse test,...




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