Power MOSFETs
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET in DPAK, TO-22...
Description
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet - production data
7$%
DPAK
7$%
TO-220
TO-220FP
7$%
IPAK
Features
Order code
VDS @TJ max.
STD10NM60N STF10NM60N STP10NM60N STU10NM60N
650 V
RDS(on) max.
0.55 Ω
ID PTOT
10 A
70 W 25 W
70 W
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Figure 1. Internal schematic diagram
Applications
'7$%
Switching applications
Description
*6
Order code
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
$0Y
Table 1. Device summary
Marki...
Similar Datasheet