BUK9MPP-55PRR
www.DataSheet4U.com
Dual TrenchPLUS logic level FET
Rev. 01 — 14 May 2009 Product data sheet
1. Product ...
BUK9MPP-55PRR
www.DataSheet4U.com
Dual TrenchPLUS logic level FET
Rev. 01 — 14 May 2009 Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode field-effect power
transistor in SO20. Device is manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring very low on-state resistance, integrated current sensing
transistors and over temperature protection diodes.
1.2 Features and benefits
Integrated current sensor Integrated temperature sensor
1.3 Applications
Lamp switching Motor drive systems Power distribution Solenoid drivers
1.4 Quick reference data
Table 1. Quick reference Conditions VGS = 5 V; ID = 5 A; Tj = 25 °C; see Figure 16; see Figure 17 Tj = 25 °C; VGS = 5 V; see Figure 18 Tj = 25 °C; VGS = 0 V; ID = 250 µA Min Typ 21.3 Max 25 Unit mΩ Symbol Parameter RDSon drain-source on-state resistance ratio of drain current to sense current
Static characteristics, FET1 and FET2
ID/Isense
5130 55
5700 -
6270 -
A/A V
V(BR)DSS drain-source breakdown voltage
NXP Semiconductors
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BUK9MPP-55PRR
Dual TrenchPLUS logic level FET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Pinning information Symbol G1 IS1 D1 A1 C1 G2 IS2 D2 A2 C2 D2 KS2 S2 S2 D2 D1 KS1 S1 S1 D1 Description gate 1 current sense 1 drain 1 anode 1 cathode 1 gate2 current sense 2 drain2 anode 2 cathode 2 drain2 Kelvin source 2 source 2 source 2 drain2 drain 1 Kelvin source 1 source...