BUK9006-55A

www.DataSheet4U.com BUK9006-55A TrenchMOS™ logic level FET Rev. 01 — 1 August 2003 Preliminary data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor available as a bare die using Philips General Purpose Automotive (GPA) TrenchMOS™ technology. Product availability: BUK9006-55A distributed as individual die on reel. 1.2 Features s 25 A testing of individual die s Inductive energy testing of individual die s Life-tested to Q101 at 175 °C s Automatic visual inspection. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 1.1 J s V(BR)DSS ≤ 55 V s Die size = 4.30 × 4.30 mm (typ) s RDSon(die) = 5 mΩ (typ) s VGS(th) = 1.5 V (typ) s Die thickness = 240 µm (typ). 2. Pinning information Table 1: Pin 1 2 Pinning - Bare die simplified outline and symbol Description gate d Simplified outline Symbol source drain; connected to underside of die 1 2 g s MBB076 03nn81 Philips Semiconductors www.DataSheet4U.com BUK9006-55A TrenchMOS™ logic level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID IDM Tstg Tj IDR IDRM EDS(AL)S Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current storage temperature junction temperature reverse drain current (DC) peak reverse drain current non-repeti...