SSM3J16FV

SSM3J16FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI) SSM3J16FV High Speed Switching Applications Analog Switch Applications Small package Low on-resistance : RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V) : RDS(ON) = 45 Ω (max) (@VGS = −1.5 V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm 1.2±0.05 0.8±0.05 0.22±0.05 0.32±0.05 0.13±0.05 Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Power dissipation Channel temperature Storage temperature range VDSS −20 V VGSS ±10 V ID −100 mA IDP −200 PD(Note1) 150 mW Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.585 mm2 ) 1.2±0.05 0.8±0.05 0.4 0.4 1 2 3 0.5±0.05 VESM 1. Gate 2. Source 3. Drain JEDEC ― JEITA ― TOSHIBA 2-1L1B Weight :1.5mg (typ...