SSM3J16CT

SSM3J16CT TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI) SSM3J16CT High Speed Switching Applications Analog Switch Applications Small package Low on-resistance : RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V) : RDS(ON) = 45 Ω (max) (@VGS = −1.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Power dissipation Channel temperature Storage temperature range VDSS −20 V VGSS ±10 V ID −100 mA IDP −200 PD(Note1) 100 mW Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (10 mm × 10 mm × 1.0 mm, Cu Pad: 100 mm2) Marking (Top View) Polarity mark Pin Condition (Top View) Polarity mark (on the top) CST3 JEDEC ― JEITA ― TOSHIBA 2-1J1B Weight :0.75 mg (typ.) Equivalent Circuit 3 1 S2 3 2 Ha...