SSM3J15TE

SSM3J15TE www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15TE High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD Tch Tstg Rating −30 ±20 −100 −200 100 150 −55~150 Unit V V mA mW °C °C Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1: Gate 2: Source 3: Drain JEDEC JEITA TOSHIBA ― ― 2-1B1B Weight: 0.0022 g(typ.) Marking 3 Equivalent Circuit (top view) 3 DQ 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Ope...