SSM3J15FV

SSM3J15FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FV High-Speed Switching Applications Analog Switch Applications Optimum for high-density mounting in small packages Low on-resistance : RDS(ON) = 12 Ω (max) (@VGS = −4 V) : RDS(ON) = 32 Ω (max) (@VGS = −2.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Power dissipation (Ta = 25°C) Channel temperature Storage temperature range Symbol Rating Unit VDSS −30 V VGSS ±20 V ID −100 mA IDP −200 PD (Note 1) 150 mW Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.585 mm2) 0.22±0.05 0.32±0.05 Unit: mm 1.2±0.05 0.8±0.05 1 3 2 1.2±0.05 0.8±0.05 0.4 0.4 0.13±0.05 0.5±0.05 VESM 1.GATE 2.SOURCE 3.DRAIN JEDEC JEITA TOSHIBA ― ― 2-1L1B Weight: 1.5 mg (typ.) 0.5mm 0...