SSM3J15CT

SSM3J15CT TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J15CT High-Speed Switching Applications Analog Switch Applications Optimum for high-density mounting in small packages Low ON-resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V) 0.6±0.05 0.5±0.03 Unit: mm 0.65±0.02 0.05±0.03 0.25±0.03 Absolute Maximum Ratings (Ta = 25°C) ３ 1.0±0.05 Characteristics Symbol Rating Unit Drain-Source voltage VDS −30 V Gate-Source voltage VGSS ±20 V Drain current DC Pulse ID −100 mA IDP −200 Drain power dissipation (Ta = 25°C) PD (Note 1) 100 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C 0.25±0.03 １ ２ 0.35±0.02 0.15±0.03 0.05±0.03 0.38 +0.02 -0.03 Note: Using continuously under heavy loads (e.g. the application of CST3 high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC - reliability significantly even if the operating conditions (i.e. JEITA - operating temperature/current/voltage, etc.) are within the absolute maximum ratings. TOSHIBA 2-1J1B Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Weight: 0.75 mg (typ.) Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (10 mm × 10 mm × 1.0 t, Cu Pad:...