SSM3J120TU

SSM3J120TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J120TU ○ Power Management Switch Applications ○ High-Current Switching Applications 1.5 V drive Low on-resistance Ron = 140 mΩ (max) (@VGS = -1.5 V) Ron = 78 mΩ (max) (@VGS = -1.8 V) Ron = 49 mΩ (max) (@VGS = -2.5 V) Ron = 38 mΩ (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit 2.0±0.1 0.65±0.05 Unit: mm 2.1±0.1 1.7±0.1 0.3-+00..015 1 2 3 0.166±0.05 Drain-Source voltage VDS -20 V Gate-Source voltage VGSS ±8 V Drain current DC ID Pulse IDP -4.0 A -8.0 Drain power dissipation PD (Note 1) 800 mW PD (Note 2) 500 Channel temperature Storage temperature Tch 150 °C Tstg −55~150 °C 0.7±0.05 UFM 1. Gate 2. Source 3. Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC ― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA TOSHIBA ― 2-2U1A absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 6.6mg (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1 : Mounted on ceramic board (25.4 mm × 25.4 ...