SSM3J113TU
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J113TU
High Speed Switching Applications
2.0V drive Low on-resistance: Ron = 449mΩ (max) (@VGS = −2.0 V)
Ron = 249mΩ (max) (@VGS = −2.5 V) Ron = 169mΩ (max) (@VGS = −4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage Gate-Sour...
