SSM3J111TU
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TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J111TU
High Speed Switch...
SSM3J111TU
www.DataSheet4U.com
TOSHIBA Field Effect
Transistor Silicon P-Channel MOS Type
SSM3J111TU
High Speed Switching Applications
2.5V drive Low on-resistance: Ron = 480mΩ (max) (@VGS = −4 V)
0.65±0.05 2.1±0.1 1.7±0.1 +0.1 0.3 -0.05 3 0.166±0.05
Unit: mm
Ron = 680mΩ (max) (@VGS = −2.5 V)
2.0±0.1
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating −20 ± 12 −1 −2 800 500 150 −55~150 Unit V V A mW °C °C
1 2
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on ceramic board. (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2 ) Note 2: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )
Note:
UFM JEDEC JEITA TOSHIBA ― ― 2-2U1A
Weight: 6.6 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic Drain-S...