SI1467DH

New Product Si1467DH www.DataSheet4U.com Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.090 at VGS = - 4.5 V 0.115 at VGS = - 2.5 V 0.150 at VGS = - 1.8 V ID (A)c - 1.6 - 1.6 - 1.6 9.0 nC Qg (Typ.) FEATURES TrenchFET® Power MOSFET 100 % Rg Tested RoHS APPLICATIONS Load Switch for Portable Devices COMPLIANT SOT-363 SC-70 (6-LEADS) S D 1 6 D Marking Code AN D 2 5 D Part # Code D P-Channel MOSFET XX YY Lot Traceability and Date Code G G 3 Top View 4 S Ordering Information: Si1467DH-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C)a, b TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Currenta, b TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipationa, b TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit - 20 ±8 - 1.6c - 1.6c - 1.6a, b, c - 1.6a, b, c - 6.5c - 1.6c - 1.25a, b, c 2.78 1.78 1.5a, b 1a, b - 55 to 150 260 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, d t≤5s Steady State Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. Package limited. d. Maximum under Steady State conditions is 125 °C/W. Document Number: 68663 S-8121...