SI1413DH

Si1413DH www.DataSheet4U.com New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.115 @ VGS = –4.5 V –20 0.155 @ VGS = –2.5 V 0.220 @ VGS = –1.8 V ID (A) –2.9 –2.4 –2.0 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package APPLICATIONS D Load Switching D PA Switch D Level Switch SOT-363 SC-70 (6-LEADS) D 1 6 D D Marking Code YY BC XX G Lot Traceability and Date Code Part # Code S D 2 5 D G 3 4 S Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID –2.0 IDM IS –1.4 1.56 0.81 –55 to 150 –8 –0.9 1.0 0.52 W _C –1.6 A Symbol VDS VGS 5 secs Steady State –20 "8 Unit V –2.9 –2.3 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71878 S-20952—Rev. A, 01-Jul-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 60 100 34 Maximum 80 125 45 Unit _C/W 1 Si1413DH www.DataSheet4U.com Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current ...