SI1403BDL

New Product Si1403BDL www.DataSheet4U.com Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) 0.150 at VGS = - 4.5 V 0.175 at VGS = - 3.6 V 0.265 at VGS = - 2.5 V ID (A) - 1.5 - 1.4 - 1.2 2.9 Qg (Typ) FEATURES TrenchFET® Power MOSFET RoHS COMPLIANT SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code OD XX YY Lot Traceability and Date Code Part # Code Top View D 2 5 D G 3 4 S Ordering Information: Si1403BDL-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg - 0.8 0.625 0.400 - 55 to 150 - 1.5 - 1.2 -5 - 0.8 0.568 0.295 W °C 5s - 20 ± 12 - 1.4 - 1.0 A Steady State Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. t≤5s Steady State Steady State Symbol RthJA RthJF Typical 165 180 105 Maximum 200 220 130 °C/W Unit Document Number: 73253 S-71951-Rev. B, 10-Sep-07 www.vishay.com 1 New Product Si1403BDL www.DataSheet4U.com Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Cu...