N-Channel Enhancement Mode Power MosFET
www.DataSheet4U.com
SST2610
3 A, 60 V, RDS(ON) 90 mΩ N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelement...
Description
www.DataSheet4U.com
SST2610
3 A, 60 V, RDS(ON) 90 mΩ N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
z z
The SST2610 uses advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. It is universally used for all commercial-industrial applications.
APPLICATIONS
z z
Low on-resistance Capable of 2.5V gate drive
PACKAGE INFORMATION
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 0.30 0.55 0 0.10 0 10
REF. G H I J K L
Millimeter Min. Max. 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF.
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current VGS@4.5V, TA=25℃ 3 Continuous Drain Current VGS@4.5V, TA=70℃ Pulsed Drain Current 1,2 Power Dissipation TA=25℃ Linear Derating Factor Operating Junction and Storage Temperature Range
Symbol VDS VGS ID ID ID PD Tj, Tstg
Ratings 60 ±20 3.0 2.3 10 2 0.016 -55 ~ +150
Unit V V A A A W W/ ℃ ℃
THERMAL DATA
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max.
Ratings 62.5
Unit
℃ / W
RθJA
01-June-2005 Rev. A
Page 1 of 4
www.DataSheet4U.com
SST2610
3 A, 60 V, RDS(ON) 90 mΩ N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature C...
Similar Datasheet