www.DataSheet4U.com
SST2604
5.5A, 3 0V,RDS(ON) 45m£[
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.F...
www.DataSheet4U.com
SST2604
5.5A, 3 0V,RDS(ON) 45m£[
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOT-26
Description
0.37Ref. 0.20 0.60 Ref. 2.60 3.00
The SST2604 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.
The SST2604 is universally used for all commercial-industrial applications.
0.25
1.40 1.80 0.30 0.55
0.95 Ref. 2.70 3.10 0~0.1
0 o 10
o
1.20Ref.
Features
* Lower Gate Charge * Fast Switching Characteristic * Small Footprint & Low Profile Package
D
Dimensions in millimeters
D 6
D 5
S 4
Date Code
2604
G
1 D 2 D 3 G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,
[email protected] Continuous Drain Current,
[email protected] Pulsed Drain Current
1,2 3 3
Symbol
VDS VGS ID@TC=25 C ID@TC=70C IDM PD@TC=25 C
o o o
Ratings
30
± 20 5.5 4.4 20 2 0.016
Unit
V V A A A W
W/ C
o o
Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-case
3
Symbol Max.
Rthj-c
Ratings
62.5
Unit
o
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
www.DataSheet4U.com
SST2604
5.5 A, 3 0V,RDS(ON) 45m£[
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless other...