Ordering number:EN2535
www.DataSheet4U.com
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1606/2SC4159
High-Voltage ...
Ordering number:EN2535
www.DataSheet4U.com
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1606/2SC4159
High-Voltage Switching, AF 100W Driver Applications
Applications
· High-voltage switching, AF power amplifier, 100W output predrivers.
Package Dimensions
unit:mm 2041
[2SA1606/2SC4159]
Features
· Micaless package facilitating mounting.
( ) : 2SA1606
E : Emitter C : Collector B : Base SANYO : TO-220ML
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
Ratings (–)180 (–)160 (–)6 (–)1.5 (–)3
Unit V V V A A W
Tc=25˚C
15 150 –55 to +150
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Base-to-Emitter Voltage Symbol ICBO IEBO hFE fT Cob VBE VCB=(–)120V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)300mA VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz VCE=(–)5V, IC=(–)10mA 60* 100 (30)23 (–)1.5 Conditions Ratings min typ max (–)10 (–)10 200* MHz pF V Unit µA µA
* : The 2SA1606/2SC4159 are classified by 300mA hFE as follows :
60 D 120 100 E 200
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliab...