C4159

Ordering number:EN2535 www.DataSheet4U.com PNP/NPN Epitaxial Planar Silicon Transistors 2SA1606/2SC4159 High-Voltage Switching, AF 100W Driver Applications Applications · High-voltage switching, AF power amplifier, 100W output predrivers. Package Dimensions unit:mm 2041 [2SA1606/2SC4159] Features · Micaless package facilitating mounting. ( ) : 2SA1606 E : Emitter C : Collector B : Base SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (–)180 (–)160 (–)6 (–)1.5 (–)3 Unit V V V A A W Tc=25˚C 15 150 –55 to +150 ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Base-to-Emitter Voltage Symbol ICBO IEBO hFE fT Cob VBE VCB=(–)120V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)300mA VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz VCE=(–)5V, IC=(–)10mA 60* 100 (30)23 (–)1.5 Conditions Ratings min typ max (–)10 (–)10 200* MHz pF V Unit µA µA * : The 2SA1606/2SC4159 are classified by 300mA hFE as follows : 60 D 120 100 E 200 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliab...