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ACT108W-600E
www.DataSheet4U.com
AC Thyristor power switch
Rev. 02 — 26 May 2009 Product data sheet
1. Product profile
1.1 General description
AC Thyristor power switch in a SOT223 surface-mountable plastic package
1.2 Features and benefits
Common terminal on mounting base enables shared cooling pad Exclusive negative gate triggering Full cycle AC conduction High over-voltage withstand capability Remote gate separates the gate driver from the effects of the load current Surface-mountable plastic package Very high noise immunity
1.3 Applications
Contactors, circuit breakers, valves, dispensers and door locks Fan motor circuits Lower-power highly inductive, resistive and safety loads Pump motor circuits
1.4 Quick reference data
Table 1. VDRM IT(RMS) Quick reference Conditions Min full sine wave; Tsp ≤ 112 °C; see Figure 3; see Figure 1; see Figure 2 VD = 12 V; Tj = 25 °C; IT = 100 mA; LD+ G-; see Figure 10 VD = 12 V; Tj = 25 °C; IT = 100 mA; LD- GVCL VPP VT clamping voltage peak pulse voltage on-state voltage ICL = 100 mA; tp = 1 ms; Tj ≤ 125 °C; see Figure 17 Tj = 25 °C; non-repetitive, off-state; see Figure 6 IT = 1.1 A; see Figure 13 Typ Max 600 0.8 Unit V A repetitive peak off-state voltage RMS on-state current gate trigger current Symbol Parameter
IGT
1
-
10
mA
1 650 -
-
10 2 1.3
mA V kV V
NXP Semiconductors
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ACT108W-600E
AC Thyristor power switch
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol LD CM G CM Description load common gate mounting base; connected to common
1 2 3 4 LD
Simplified outline
Graphic symbol
G CM
001aaj924
SOT223 (SC-73)
3. Ordering information
Table 3. Ordering information Package Name ACT108W-600E SC-73 Description plastic surface-mounted package with increased heatsink; 4 leads Version SOT223 Type number
4. Limiting values
Table 4. Symbol VDRM IT(RMS) dIT/dt IGM VGM Tstg Tj ITSM Limiting values Parameter repetitive peak off-state voltage RMS on-state current rate of rise of on-state current peak gate current peak gate voltage storage temperature junction temperature non-repetitive peak on-state current I2t for fusing average gate power peak pulse voltage full sine wave; tp = 16.7 ms; Tj(init) = 25 °C full sine wave; tp = 20 ms; Tj(init) = 25 °C; see Figure 4; see Figure 5 tp = 10 ms; sine-wave pulse over any 20 ms period Tj = 25 °C; non-repetitive, off-state; see Figure 6 full sine wave; Tsp ≤ 112 °C; see Figure 3; see Figure 1; see Figure 2 IT = 1 A; IG = 20 mA; dIG/dt = 0.2 A/µs t = 20 μs positive applied gate voltage Conditions Min -40 Max 600 0.8 100 1 15 150 125 8.8 8 0.32 0.1 2 Unit V A A/µs A V °C °C A A A2s W kV
In accordance with the Absolute Maximum Rating System (IEC 60134).
I2t PG(AV) VPP
ACT108W-600E_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 26 May 2009
2 of 12
NXP Semiconductors
www.DataSheet4U.com
ACT108W-600E
AC Thyristor power switch
8 IT(RMS) (A) 6
003aac822
1 IT(RMS) (A) 0.8
003aac807
0.6 4 0.4 2 0.2
0 10−2
10−1
1 10 surge duration (s)
0 −50
0
50
100
T sp (°C)
150
Fig 2. Fig 1. RMS on-state current as a function of surge duration; maximum values
RMS on-state current as a function of solder point temperature; maximum values
1.0 Ptot (W) 0.8
α α
003aac803
α = 180°
0.6
0.4
0.2
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 IT(RMS) (A) 0.8
Fig 3.
Total power dissipation as a function of RMS on-state current; maximum values
ACT108W-600E_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 26 May 2009
3 of 12
NXP Semiconductors
www.DataSheet4U.com
ACT108W-600E
AC Thyristor power switch
10 ITSM (A) 8
003aac804
6
4
IT
ITSM t 1/f
2
Tj(init) = 25 °C max 0 1 10 102 number of cycles 103
Fig 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values
103
003aac805
ITSM (A)
IT
ITSM t
102
tp Tj(init) = 25 °C max
10
1 10−5
10−4
10−3 tp (s)
10−2
Fig 5.
Non-repetitive peak on-state current as a function of pulse width; maximum values
IEC 61000-4-5 Standards Surge Generator Open Circuit Voltage 1.2 μs/50 μs waveform
RGen 2Ω R 150 Ω L 5 μH RG 220 Ω
Surge pulse
Load Model
DUT
003aad077
Fig 6.
Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5
ACT108W-600E_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 26 May 2009
4 of 12
NXP Semiconductors
www.DataSheet4U.com
ACT108W-600E
AC Thyristor power switch
5. Thermal characteristics
Table 5. Symbol Rth(j-sp) Rth(j-a) Thermal characteristics Parameter Conditions Min Typ 156 70 Max 15 Unit K/W K/W K/W thermal resistance from full cycle with heatsink compound; junction to solder point see Figure 9 thermal resistance from full cycle; printed-circuit board mounted for junction to ambient minimum footprint; see Figure 7 full cycle; printed-circuit board mounted for pad area; see Figure 8
3.8 min 36 1.5 min 18
6.3 1.5 min (3×) 1.5 min 4.6
001aa.