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ACT108W-600E Dataheets PDF



Part Number ACT108W-600E
Manufacturers NXP
Logo NXP
Description AC Thyristor Power Switch
Datasheet ACT108W-600E DatasheetACT108W-600E Datasheet (PDF)

ACT108W-600E www.DataSheet4U.com AC Thyristor power switch Rev. 02 — 26 May 2009 Product data sheet 1. Product profile 1.1 General description AC Thyristor power switch in a SOT223 surface-mountable plastic package 1.2 Features and benefits „ Common terminal on mounting base enables shared cooling pad „ Exclusive negative gate triggering „ Full cycle AC conduction „ High over-voltage withstand capability „ Remote gate separates the gate driver from the effects of the load current „ Surface-mo.

  ACT108W-600E   ACT108W-600E


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ACT108W-600E www.DataSheet4U.com AC Thyristor power switch Rev. 02 — 26 May 2009 Product data sheet 1. Product profile 1.1 General description AC Thyristor power switch in a SOT223 surface-mountable plastic package 1.2 Features and benefits „ Common terminal on mounting base enables shared cooling pad „ Exclusive negative gate triggering „ Full cycle AC conduction „ High over-voltage withstand capability „ Remote gate separates the gate driver from the effects of the load current „ Surface-mountable plastic package „ Very high noise immunity 1.3 Applications „ Contactors, circuit breakers, valves, dispensers and door locks „ Fan motor circuits „ Lower-power highly inductive, resistive and safety loads „ Pump motor circuits 1.4 Quick reference data Table 1. VDRM IT(RMS) Quick reference Conditions Min full sine wave; Tsp ≤ 112 °C; see Figure 3; see Figure 1; see Figure 2 VD = 12 V; Tj = 25 °C; IT = 100 mA; LD+ G-; see Figure 10 VD = 12 V; Tj = 25 °C; IT = 100 mA; LD- GVCL VPP VT clamping voltage peak pulse voltage on-state voltage ICL = 100 mA; tp = 1 ms; Tj ≤ 125 °C; see Figure 17 Tj = 25 °C; non-repetitive, off-state; see Figure 6 IT = 1.1 A; see Figure 13 Typ Max 600 0.8 Unit V A repetitive peak off-state voltage RMS on-state current gate trigger current Symbol Parameter IGT 1 - 10 mA 1 650 - - 10 2 1.3 mA V kV V NXP Semiconductors www.DataSheet4U.com ACT108W-600E AC Thyristor power switch 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol LD CM G CM Description load common gate mounting base; connected to common 1 2 3 4 LD Simplified outline Graphic symbol G CM 001aaj924 SOT223 (SC-73) 3. Ordering information Table 3. Ordering information Package Name ACT108W-600E SC-73 Description plastic surface-mounted package with increased heatsink; 4 leads Version SOT223 Type number 4. Limiting values Table 4. Symbol VDRM IT(RMS) dIT/dt IGM VGM Tstg Tj ITSM Limiting values Parameter repetitive peak off-state voltage RMS on-state current rate of rise of on-state current peak gate current peak gate voltage storage temperature junction temperature non-repetitive peak on-state current I2t for fusing average gate power peak pulse voltage full sine wave; tp = 16.7 ms; Tj(init) = 25 °C full sine wave; tp = 20 ms; Tj(init) = 25 °C; see Figure 4; see Figure 5 tp = 10 ms; sine-wave pulse over any 20 ms period Tj = 25 °C; non-repetitive, off-state; see Figure 6 full sine wave; Tsp ≤ 112 °C; see Figure 3; see Figure 1; see Figure 2 IT = 1 A; IG = 20 mA; dIG/dt = 0.2 A/µs t = 20 μs positive applied gate voltage Conditions Min -40 Max 600 0.8 100 1 15 150 125 8.8 8 0.32 0.1 2 Unit V A A/µs A V °C °C A A A2s W kV In accordance with the Absolute Maximum Rating System (IEC 60134). I2t PG(AV) VPP ACT108W-600E_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 26 May 2009 2 of 12 NXP Semiconductors www.DataSheet4U.com ACT108W-600E AC Thyristor power switch 8 IT(RMS) (A) 6 003aac822 1 IT(RMS) (A) 0.8 003aac807 0.6 4 0.4 2 0.2 0 10−2 10−1 1 10 surge duration (s) 0 −50 0 50 100 T sp (°C) 150 Fig 2. Fig 1. RMS on-state current as a function of surge duration; maximum values RMS on-state current as a function of solder point temperature; maximum values 1.0 Ptot (W) 0.8 α α 003aac803 α = 180° 0.6 0.4 0.2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 IT(RMS) (A) 0.8 Fig 3. Total power dissipation as a function of RMS on-state current; maximum values ACT108W-600E_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 26 May 2009 3 of 12 NXP Semiconductors www.DataSheet4U.com ACT108W-600E AC Thyristor power switch 10 ITSM (A) 8 003aac804 6 4 IT ITSM t 1/f 2 Tj(init) = 25 °C max 0 1 10 102 number of cycles 103 Fig 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 103 003aac805 ITSM (A) IT ITSM t 102 tp Tj(init) = 25 °C max 10 1 10−5 10−4 10−3 tp (s) 10−2 Fig 5. Non-repetitive peak on-state current as a function of pulse width; maximum values IEC 61000-4-5 Standards Surge Generator Open Circuit Voltage 1.2 μs/50 μs waveform RGen 2Ω R 150 Ω L 5 μH RG 220 Ω Surge pulse Load Model DUT 003aad077 Fig 6. Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5 ACT108W-600E_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 26 May 2009 4 of 12 NXP Semiconductors www.DataSheet4U.com ACT108W-600E AC Thyristor power switch 5. Thermal characteristics Table 5. Symbol Rth(j-sp) Rth(j-a) Thermal characteristics Parameter Conditions Min Typ 156 70 Max 15 Unit K/W K/W K/W thermal resistance from full cycle with heatsink compound; junction to solder point see Figure 9 thermal resistance from full cycle; printed-circuit board mounted for junction to ambient minimum footprint; see Figure 7 full cycle; printed-circuit board mounted for pad area; see Figure 8 3.8 min 36 1.5 min 18 6.3 1.5 min (3×) 1.5 min 4.6 001aa.


STGW38IH130D ACT108W-600E BT151-500RT


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