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LF198A

National Semiconductor

Monolithic Sample-and-Hold Circuits

LF198/LF298/LF398, LF198A/LF398A Monolithic Sample-and-Hold Circuits July 2000 LF198/LF298/LF398, LF198A/LF398A Monoli...


National Semiconductor

LF198A

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Description
LF198/LF298/LF398, LF198A/LF398A Monolithic Sample-and-Hold Circuits July 2000 LF198/LF298/LF398, LF198A/LF398A Monolithic Sample-and-Hold Circuits General Description The LF198/LF298/LF398 are monolithic sample-and-hold circuits which utilize BI-FET technology to obtain ultra-high dc accuracy with fast acquisition of signal and low droop rate. Operating as a unity gain follower, dc gain accuracy is 0.002% typical and acquisition time is as low as 6 µs to 0.01%. A bipolar input stage is used to achieve low offset voltage and wide bandwidth. Input offset adjust is accomplished with a single pin, and does not degrade input offset drift. The wide bandwidth allows the LF198 to be included inside the feedback loop of 1 MHz op amps without having stability problems. Input impedance of 1010Ω allows high source impedances to be used without degrading accuracy. P-channel junction FET’s are combined with bipolar devices in the output amplifier to give droop rates as low as 5 mV/min with a 1 µF hold capacitor. The JFET’s have much lower noise than MOS devices used in previous designs and do not exhibit high temperature instabilities. The overall design guarantees no feed-through from input to output in the hold mode, even for input signals equal to the supply voltages. Features n Operates from ±5V to ±18V supplies n Less than 10 µs acquisition time n TTL, PMOS, CMOS compatible logic input n 0.5 mV typical hold step at Ch = 0.01 µF n Low input offset n 0.002% gain accuracy n Low outp...




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