LET9120
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
Preliminary data
Featu...
LET9120
RF power
transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
Preliminary data
Features
■ Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 120 W with 18 dB gain @ 860 MHz ■ BeO-free package
Description
The LET9120 is a common source n-channel enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz.
M246 Epoxy sealed
Figure 1. Pin connection 12
1-2 Drain 4-5 Gate
5
4 3 Source
Table 1.
Device summary Order code
LET9120
Package M246
Branding LET9120
October 2010
Doc ID 15509 Rev 5
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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Contents
Contents
LET9120
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
