MW7IC2040NBR1

Freescale Semiconductor Technical Data Document Number: MW7IC2040N Rev. 0, 2/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base www.datasheet4u.com station modulations. Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 130 mA, IDQ2 = 330 mA, Pout = 4 Watts Avg., f = 1932.5, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 32 dB Power Added Efficiency — 17.5% ACPR @ 5 MHz Offset — - 50 dBc in 3.84 MHz Bandwidth Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 50 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 40 Watts CW Pout. Typical Pout @ 1 dB Compression Point ' 30 Watts CW GSM EDGE Application Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 430 mA, Pout = 16 Watts Avg., 1805 - 1880 MHz Power Gain — 33 dB Power Added Efficiency — 35% Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 77 dBc EVM — 1.5% rms GSM Application Typical GSM Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 430 mA, Pout = 40 Watts CW, 1805 - 1880 MHz and 1930 - 1990 MHz Power Gain — 31 dB Power Added Efficiency — 50% Features Characterized with Series Equivalent Large...