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MRF6S19100NR1 Dataheets PDF



Part Number MRF6S19100NR1
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF Power Transistors
Datasheet MRF6S19100NR1 DatasheetMRF6S19100NR1 Datasheet (PDF)

Freescale Semiconductor Technical Data Document Number: MRF6S19100N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L www.datasheet4u.com applications. • Typical 2 - Carrier N - CDMA Performance: VDD .

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Freescale Semiconductor Technical Data Document Number: MRF6S19100N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L www.datasheet4u.com applications. • Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 22 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 25.5% IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • N Suffix Indicates Lead - Free Terminations • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • 200°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6S19100NR1 MRF6S19100NBR1 1930- 1990 MHz, 22 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S19100NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S19100NBR1 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +68 - 0.5, +12 287 1.64 - 65 to +175 200 Unit Vdc Vdc W W/°C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 75°C, 23 W CW Symbol RθJC Value (1,2) 0.61 0.65 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF6S19100NR1 MRF6S19100NBR1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level www.datasheet4u.com Test Methodology Rating 3 Package Peak Temperature 260 Unit °C Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 330 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 950 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2.2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.5 — pF VGS(th) VGS(Q) VDS(on) gfs 1 2 — — 2 2.8 0.24 5.3 3 4 — — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 22 W Avg., f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps ηD IM3 ACPR IRL 13 24 - 47 - 60 — 14.5 25.5 - 37 - 51 - 12 16 36 - 35 - 48 - 10 dB % dBc dBc dB MRF6S19100NR1 MRF6S19100NBR1 2 RF Device Data Freescale Semiconductor R1 VBIAS + C1 R2 C2 C3 Z5 Z12 RF INPUT www.datasheet4u.com C7 DUT VSUPPLY C9 C10 C11 R3 Z1 Z2 Z3 Z4 Z11 Z6 Z7 Z8 Z9 C8 Z10 C4 C5 C6 RF OUTPUT VSUPPLY Z1, Z10 Z2 Z3 Z4 Z5 Z6 0.743″ x 0.084″ Microstrip 0.818″ x 0.084″ Microstrip 0.165″ x 0.386″ Microstrip 0.505″ x 0.800″ Microstrip 0.323″ x 0.040″ Microstrip 0.160″ x 0.880″ Microstrip Z7 Z8 Z9 Z11, Z12 PCB 0.319″ x 0.880″ Microstrip 0.355″ x 0.215″ Microstrip 0.661″ x 0.084″ Microstrip 1.328″ x 0.120″ Microstrip Arlon AD250, 0.030″, εr = 2.5 Figure 1. MRF6S19100NR1(.


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