Freescale Semiconductor Technical Data
Document Number: MRF6S18100N Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d multicarrier amplifier applications.
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