Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
...
Freescale Semiconductor Technical Data
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
GSM Application Typical GSM Performance: VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 Watts
CW, f = 1990 MHz Power Gain — 15 dB Drain Efficiency - 50%
GSM EDGE Application Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 450 mA,
Pout = 25 Watts Avg., Full Frequency Band (1805- 1880 MHz or 1930- 1990 MHz)
Power Gain — 15.5 dB Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 76 dBc EVM — 2% rms Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW Output Power Features Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection 225°C Capable Plastic Package N Suffix Indicates Lead - Free Terminations. RoHS Compliant. In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6S18060N Rev. 4, 12/2008
MRF6S18060NR1 MRF6S18060NBR1
1800- 2000 MHz, 60 W, 26 V GSM/GSM EDGE
LATERAL N - CHANNEL RF POWER MOSFETs
CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC
MRF6S18060NR1
CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC
MRF6S18060NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage ...