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MRF19060LR3 Dataheets PDF



Part Number MRF19060LR3
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF Power Field Effect Transistors
Datasheet MRF19060LR3 DatasheetMRF19060LR3 Datasheet (PDF)

Freescale Semiconductor Technical Data Document Number: MRF19060 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications. www.datasheet4u.com • Typical CDMA Performance: 1960 MHz, 26 Volts IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 7.5 Watts Power Gain — 12.5 dB A.

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Freescale Semiconductor Technical Data Document Number: MRF19060 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications. www.datasheet4u.com • Typical CDMA Performance: 1960 MHz, 26 Volts IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 7.5 Watts Power Gain — 12.5 dB Adjacent Channel Power — 885 kHz: - 47 dBc @ 30 kHz BW 1.25 MHz: - 55 dBc @ 12.5 kHz BW 2.25 MHz: - 55 dBc @ 1 MHz BW • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 60 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. MRF19060LR3 MRF19060LSR3 1930- 1990 MHz, 60 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF19060LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF19060LSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 180 1.03 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.97 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum) © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF19060LR3 MRF19060LSR3 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 μAdc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) www.datasheet4u.com Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 500 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture, 50 ohm system) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W .


MRF19060SR3 MRF19060LR3 MRF19060LSR3


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