MRF9085LR3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9085/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with www.datasheet4u.com frequencies from 865 to 895 MHz. The high gain and broadband performance N - Channel Enhancement - Mode Lateral MOSFETs of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mA IS - 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 20 Watts Power Gain — 17.9 dB Efficiency — 28% Adjacent Channel Power — 750 kHz: - 45.0 dBc @ 30 kHz BW 1.98 MHz: - 60.0 dBc @ 30 kHz BW Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters Low Gold Plating Thickness on Leads, 40µ″ Nominal. In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF9085LR3 MRF9085LSR3 880 MHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs Freescale Semiconductor, Inc... CASE 465 - 06, STYLE 1 NI - 780 MRF9085LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF9085LSR3 MAXIMUM RATINGS Rating Dra...