MRF9080LSR3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9080/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance www.datasheet4u.com of these devices make them ideal for large–signal, common– source amplifier applications in 26 volt base station equipment. Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.5 dB Efficiency @ P1db: 55% Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 GSM 900 MHz FREQUENCY BAND, 75 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 465–06, STYLE 1 NI–780 MRF9080 CASE 465A–06, STYLE 1 NI–780S MRF9080SR3, MRF9080LSR3 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tst...