RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs
DB-55015-490
www.datasheet4u.com
RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs
Prel...
Description
DB-55015-490
www.datasheet4u.com
RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
■ ■ ■ ■ ■ ■ ■ ■
Excellent thermal stability Frequency: 420 - 490 MHz Supply voltage: 13.2 V Output power: 15 W Power gain: 13.5 ± 0.7 dB Efficiency: 51 % - 62 % Load mismatch: 20:1 Beo free amplifier
Description
The DB-55015-490 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for UHF mobile radio applications. Table 1.
Mechanical specification: L = 60 mm, W = 30 mm
Device summary
Order codes DB-55015-490
March 2009
Rev 1
1/14
www.st.com 14
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Contents
DB-55015-490
Contents
1 www.datasheet4u.com Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 3 4 5 6 7 8
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Similar Datasheet