Advanced Power MOSFET
FEATURES www.datasheet4u.com
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 C Operating Temperature n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Low RDS(ON) : 0.444 Ω (Typ.)
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SFW/I9520
BVDSS = -100 V RDS(on) = 0.6 Ω ID = -6.0 ...
