SFW9520

Advanced Power MOSFET FEATURES www.datasheet4u.com n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 C Operating Temperature n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Low RDS(ON) : 0.444 Ω (Typ.) 1 SFW/I9520 BVDSS = -100 V RDS(on) = 0.6 Ω ID = -6.0 A D2-PAK 2 o I2-PAK 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * o o Value -100 -6.0 -4.0 1 O Units V A A V mJ A mJ V/ns W W W/ C o -24 ±30 144 -6.0 4.9 -6.5 3.8 49 0.33 - 55 to +175 O 1 O 1 O 3 O 2 Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds o TJ , TSTG TL o C 300 Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 3.06 40 62.5 o Units C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. C SFW/I9520 Electrical Characteristics (TC=25oC unless otherwise specified) Symbol www.datasheet4u.com P-CHANNEL POWER MOSFET Characteristic Dr...