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LET20015 Dataheets PDF



Part Number LET20015
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
Datasheet LET20015 DatasheetLET20015 Datasheet (PDF)

LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION • IS-97 CDMA PERFORMANCES POUT = 2.5 W EFF. = 20 % DESCRIPTION The LET20015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It .

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LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION • IS-97 CDMA PERFORMANCES POUT = 2.5 W EFF. = 20 % DESCRIPTION The LET20015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2 GHz. LET20015 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET20015’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. ORDER CODE LET90015 PowerSO-10RF (formed lead) BRANDING LET90015 PIN CONNECTION SOURCE GATE DRAIN Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 C) Max. Operating Junction Temperature Storage Temperature ° Parameter Value 65 -0.5 to +15 2 TBD 165 -65 to +175 Unit V V A W °C °C THERMAL DATA (TCASE = 70 °C) Rth(j-c) Junction -Case Thermal Resistance TBD °C/W 1/5 February, 27 2003 LET20015 ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 1 mA VDS = 26 V VDS = 0 V ID = TBD ID = 1 A ID = 1 A VDS = 26 V VDS = 26 V VDS = 26 V f = 1 MHz f = 1 MHz f = 1 MHz 2.5 TBD TBD TBD TBD TBD Min. 65 1 1 5.0 Typ. Max. Unit V µA µA V V mho pF pF pF Symbol Test Conditions Min. Typ. Max. Unit DYNAMIC (f = 2000 MHz) P1dB GPS ηD IMD3(1) Load mismatch VDD = 26 V VDD = 26 V VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD IDQ = TBD IDQ = TBD POUT = 15 W POUT = 15 W POUT = 15 W PEP POUT = 15 W 15 11 45 13 50 -32 -28 10:1 W dB % dBc VSWR IDQ = TBD VDD = 26 V ALL PHASE ANGLES DYNAMIC (f = 1930 - 1990 MHz) POUT(2) GPS ηD (2) VDD = 26 V VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD IDQ = TBD POUT = 15 W POUT = 15 W 10 11 40 15 13 45 2.5 W dB % W 885 KHz < -47 dBc POUT(CDMA) (3) 1.25 MHz < -55 dBc 2.25 MHz < -55 dBc ηD(CDMA)(3) 885 KHz < -47 dBc 1.25 MHz < -55 dBc 2.25 MHz < -55 dBc 20 % (1) f1 = 2000 MHz, f2 = 2000.1 MHz (2) 1 dB Compression point (3) IS-97 CDMA Pilot, Sync, Paging, Traffic, Codes 8 Thru 13 2/5 LET20015 PowerSO-10RF Straight Lead MECHANICAL DATA DIM. A1 A2 A3 A4 a b c D D1 E E1 E2 E3 F G R1 R2 T1 T2 5.4 0.23 9.4 7.4 15.15 9.3 7.3.


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