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11N60S5
SPP11N60S5
Description
Cool MOS™ Power
Transistor
Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance SPP11N60S5 SPI11N60S5 VDS RDS(on) ID 600 V 0.38 Ω 11 A PG-TO262 PG-TO220 2 P-TO220-3-1 23 1 Type SPP11N60S5 SPI11N60S5 Package PG-TO220 ...
Infineon Technologies AG
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