LED55C

GaAs INFRARED EMITTING DIODE LED55B PACKAGE DIMENSIONS 0.209 (5.31) 0.184 (4.67) LED55C LED56 0.030 (0.76) NOM 0.255 (6.48) 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) SCHEMATIC 1 0.040 (1.02) 0.040 (1.02) 45° Ø0.020 (0.51) 2X 3 ANODE (Connected To Case) CATHODE 3 NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. 1 DESCRIPTION The LED55B/LED55C/LED56 are 940 nm LEDs in a narrow angle, TO-46 package. FEATURES Good optical to mechanical alignment Mechanically and wavelength matched to the TO-18 series phototransistor Hermetically sealed package High irradiance level  2001 Fairchild Semiconductor Corporation DS300312 6/05/01 1 OF 4 www.fairchildsemi.com GaAs INFRARED EMITTING DIODE LED55B ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Continuous Forward Current Forward Current (pw, 1µs; 200Hz) Reverse Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF IF VR PD PD LED55C Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 100 10 3 170 1.3 LED56 Unit °C °C °C °C mA A V mW W NOTE: 1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 13.0 mW/°C above 25°C case. 3. RMA flux is recommen...