LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
www.datasheet4u.com
PNP Silicon
3 COLLECTOR
LBCW69LT1G LBCW70L...
LESHAN RADIO COMPANY, LTD.
General Purpose
Transistors
www.datasheet4u.com
PNP Silicon
3 COLLECTOR
LBCW69LT1G LBCW70LT1G
3
1 BASE
Featrues
We declare that the material of product compliance with RoHS requirements.
2 EMITTER
1 2
MAXIMUM RATINGS
CASE 318–08, STYLE 6
Rating Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous
Symbol V CEO V
EBO
Value – 45 – 5.0 – 100
Unit Vdc Vdc mAdc
SOT–23 (TO–236AB)
IC
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ , Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
DEVICE MARKING
LBCW69LT1G = H1; LBCW70LT1G= H2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0 ) Collector–Emitter Breakdown Voltage (IC = –100 µAdc, V EB = 0 ) Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0) Collector Cutoff Current (VCE = –20 Vdc, I E = 0 ) (VCE = –20 Vdc, I E = 0 , TA = 100°C) 1. FR– 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO V (BR)CES V (BR)EBO I CEO — — – 100 – 10 nAdc µAdc – 45 – 50 – 5.0 — — — Vdc Vdc Vdc
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LESHAN RADIO COMPANY, L...