LBC846ALT1

LESHAN RADIO COMPANY, LTD. www.datasheet4u.com General Purpose Transistors NPN Silicon Moisture Sensitivity Level: 1 ESD Rating – Human Body Model: >4000 V Pb-Free Packages are Available MAXIMUM RATINGS Rating Collector–Emitter Voltage LBC846 LBC847, LBC850 LBC848, LBC849 Collector–Base Voltage LBC846 LBC847, LBC850 LBC848, LBC849 Emitter–Base Voltage LBC846 LBC847, LBC850 LBC848, LBC849 Collector Current – Continuous IC VEBO 6.0 6.0 5.0 100 mAdc VCBO 80 50 30 Vdc 2 EMIT T ER LBC846ALT1 Series 3 ESD Rating – Machine Model: >400 V 1 Symbol VCEO Value 65 45 30 Unit Vdc 2 SOT–23 Vdc 3 COLLECT OR 1 B ASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board (Note 1.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1.) Total Device Dissipation Alumina Substrate (Note 2.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2.) Junction and Storage Temperature Range Symbol PD Max 225 Unit mW MARKING DIAGRAM 3 xx 1.8 RqJA PD 556 300 mW/°C °C/W mW xx= Device Marking (See Table Below) 2.4 RqJA TJ, Tstg 417 –55 to +150 mW/°C °C/W °C 1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. LBC846ALT1S-1/6 LESHAN RADIO COMPANY, LTD. LBC846ALT1 Series www.datasheet4u.com DEVICE MARKING AND ORDERING INFORMATION Device LBC846ALT1 LBC846ALT1G LBC846BLT1 LBC846BLT1G LBC847ALT1 LBC847ALT1G LBC847BLT1 LBC847BLT1G LBC847CLT1 LBC847CLT1G LBC848ALT1 LBC848ALT1G LBC848BLT1 LBC...