Document
STP200N4F3 STB200N4F3
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N-channel 40V - 0.0035Ω - 120A - D2PAK - TO-220 planar STripFET™ Power MOSFET
Features
Type STB200N4F3 STP200N4F3
■ ■
VDSS 40V 40V
RDS(on) Max <0.0040Ω <0.0044Ω
ID 120A 120A
Pw 300W 300W
3 1
1 2 3
100% avalanche tested Standard threshold drive D²PAK
TO-220
Applications
■
Switching applications – Automotive
Description
Figure 1. This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. this new improved device has been specifically designed for automotive applications. Internal schematic diagram
Table 1.
Device summary
Marking 200N4F3 200N4F3 Package D²PAK TO-220 Packaging Tape & reel Tube
Order codes STB200N4F3 STP200N4F3
October 2007
Rev 2
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Contents
STB200N4F3 - STP200N4F3
Contents
1 www.datasheet4u.com 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5 6
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STB200N4F3 - STP200N4F3
Electrical ratings
1
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Electrical ratings
Table 2.
Symbol VDS VGS ID
(1)
Absolute maximum ratings
Parameter Drain-source voltage Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Value 40 ±20 120 120 480 300 2.0 862 4.2 -55 to 175 Unit V V A A A W W/°C mJ V/ns °C
ID (1) IDM
(2)
PTOT EAS (3) dv/dt(4) Tj Tstg
Single pulse avalanche energy Peak diode recovery voltage slope Operating junction temperature Storage temperature
1. Current limited by package 2. Pulse width limited by safe operating area 3. Starting Tj = 25°C, ID = 60A, VDD= 25V 4. ISD ≤60A, di/dt ≤440 A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.
Table 3.
Symbol Rthj-case Rthj-pcb
(1)
Thermal data
Value Parameter TO-220 Thermal resistance junction-case max Thermal resistance junction-pcb max Thermal resistance junction-ambient max -62.5 0.50 35 -D²PAK °C/W °C/W °C/W Unit
Rthj-amb
1. When mounted on FR-4 board, 1inch² 2 oz. Cu.
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Electrical characteristics
STB200N4F3 - STP200N4F3
2
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Electrical characteristics
(TCASE=25°C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250µA, VGS= 0 VDS = Max rating, VDS = Max rating @125°C VGS = ±20V VDS= VGS, ID = 250µA VGS= 10V, ID= 80A D²PAK TO-220 2 Min. 40 10 100
±100
Typ.
Max.
Unit V µA µA nA V Ω Ω
4 0.0035 0.0040 0.0040 0.0044
Table 5.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =10V, ID = 80A Min. Typ. 200 5100 1270 37 75 23 17 Max. Unit S pF pF pF nC nC nC
VDS =25V, f=1 MHz, VGS=0
VDD=20V, ID = 120A VGS =10V (see Figure 14)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
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STB200N4F3 - STP200N4F3
Electrical characteristics
Table 6.
Symbol
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Switching times
Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Test conditions VDD=20 V, ID=60A, RG=4.7Ω, VGS=10V (see Figure 13) VDD=20 V, ID=60A, RG=4.7Ω, VGS=10V (see Figure 13) Min Typ 19 180 90 65 Max Unit ns ns ns ns
td(on) tr td(off) tf
Table 7.
Symbol ISD ISDM VSD trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120A, VGS=0 ISD=120A, di/dt = 100A/µs, VDD=20 V, Tj=150°C (see Figure 18) 67 130 4 Test conditions Min Typ Max 120 480 1.5 Unit A A V ns nC A
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Electrical characteristics
STB200N4F3 - STP200N4F3
2.1
Figure 2.
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Electrical characteristics (curves)
Safe operating area Figure 3. Thermal impedance
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Normalized BVDSS vs. temperature
Figure 7.
Static drain-source on resistance
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STB200N4F3 - STP200N4F3 Figure 8. Gate charge vs. gate-source voltage Figure 9..