Document
STP5NK65ZFP
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N-channel 650 V, 1.5 Ω, 4.5 A TO-220FP Zener-protected SuperMESH™ Power MOSFET
Features
Type STP5NK65ZFP
■ ■ ■ ■ ■ ■
VDSS 650 V
RDS(on) max < 1.8 Ω
ID 4.5 A
Pw 25 W
100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Improved ESD capability
1 2 3
TO-220FP
Applications
■
Switching application
Figure 1.
Internal schematic diagram
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products
Table 1.
Device summary
Marking P5NK65ZFP Package TO-220FP Packaging Tube
Order codes STP5NK65ZFP
April 2009
Doc ID 15565 Rev 1
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Electrical ratings
STP5NK65ZFP
1
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Electrical ratings
Table 2.
Symbol VDS VGS ID ID IDM
(2)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 650 ± 30 4.5
(1)
Unit V V A A A W W/°C V V/ns V
3.1 (1) 18
(1)
PTOT
25 0.6 2000 4.5 2500
VESD(G-S) dv/dt (3) VISO Tj Tstg
Gate source ESD (HBM-C=100 pF, R=1.5 kΩ) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Operating junction temperature Storage temperature
-55 to 150
V
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 5.7 A, di/dt ≤ 200 A/µs, VDD =80% V(BR)DSS.
Table 3.
Symbol Rthj-case Rthj-amb Tl
Absolute maximum ratings
Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Value 5 62.5 300 Unit V V A
Table 4.
Symbol IAR EAS
Absolute maximum ratings
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Value 4.2 170 Unit A mJ
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Doc ID 15565 Rev 1
STP5NK65ZFP
Electrical characteristics
2
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Electrical characteristics
(Tcase =25 °C unless otherwise specified) Table 5.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID =1 mA, VGS = 0 VDS=max rating VDS=max rating @125 °C VGS = ± 20 V VDS = VGS, ID = 50 µA VGS = 10 V, ID = 2.1 A Min. 650 3 Typ. 3.75 1.5 Max. 1 50 ±10 4.5 1.8 Unit V µA µA µA V Ω
Table 6.
Symbol gfs
(1)
Dynamic
Paramete.