DatasheetsPDF.com

STP5NK65ZFP Dataheets PDF



Part Number STP5NK65ZFP
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description Power MOSFETs
Datasheet STP5NK65ZFP DatasheetSTP5NK65ZFP Datasheet (PDF)

STP5NK65ZFP www.datasheet4u.com N-channel 650 V, 1.5 Ω, 4.5 A TO-220FP Zener-protected SuperMESH™ Power MOSFET Features Type STP5NK65ZFP ■ ■ ■ ■ ■ ■ VDSS 650 V RDS(on) max < 1.8 Ω ID 4.5 A Pw 25 W 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Improved ESD capability 1 2 3 TO-220FP Applications ■ Switching application Figure 1. Internal schematic diagram Description The SuperMESH™ seri.

  STP5NK65ZFP   STP5NK65ZFP



Document
STP5NK65ZFP www.datasheet4u.com N-channel 650 V, 1.5 Ω, 4.5 A TO-220FP Zener-protected SuperMESH™ Power MOSFET Features Type STP5NK65ZFP ■ ■ ■ ■ ■ ■ VDSS 650 V RDS(on) max < 1.8 Ω ID 4.5 A Pw 25 W 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Improved ESD capability 1 2 3 TO-220FP Applications ■ Switching application Figure 1. Internal schematic diagram Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products Table 1. Device summary Marking P5NK65ZFP Package TO-220FP Packaging Tube Order codes STP5NK65ZFP April 2009 Doc ID 15565 Rev 1 1/12 www.st.com 12 Electrical ratings STP5NK65ZFP 1 www.datasheet4u.com Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (2) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 650 ± 30 4.5 (1) Unit V V A A A W W/°C V V/ns V 3.1 (1) 18 (1) PTOT 25 0.6 2000 4.5 2500 VESD(G-S) dv/dt (3) VISO Tj Tstg Gate source ESD (HBM-C=100 pF, R=1.5 kΩ) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Operating junction temperature Storage temperature -55 to 150 V 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 5.7 A, di/dt ≤ 200 A/µs, VDD =80% V(BR)DSS. Table 3. Symbol Rthj-case Rthj-amb Tl Absolute maximum ratings Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Value 5 62.5 300 Unit V V A Table 4. Symbol IAR EAS Absolute maximum ratings Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Value 4.2 170 Unit A mJ 2/12 Doc ID 15565 Rev 1 STP5NK65ZFP Electrical characteristics 2 www.datasheet4u.com Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID =1 mA, VGS = 0 VDS=max rating VDS=max rating @125 °C VGS = ± 20 V VDS = VGS, ID = 50 µA VGS = 10 V, ID = 2.1 A Min. 650 3 Typ. 3.75 1.5 Max. 1 50 ±10 4.5 1.8 Unit V µA µA µA V Ω Table 6. Symbol gfs (1) Dynamic Paramete.


STL17NF25 STP5NK65ZFP STB200N4F3


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)