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STGW45NC60VD Dataheets PDF



Part Number STGW45NC60VD
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description Very Fast IGBT
Datasheet STGW45NC60VD DatasheetSTGW45NC60VD Datasheet (PDF)

STGW45NC60VD www.datasheet4u.com 45 A - 600 V - very fast IGBT Features ■ ■ Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode 3 Applications ■ ■ ■ ■ 2 1 High frequency inverters UPS Motor drivers Induction heating TO-247 long leads Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Figure 1. Internal schematic diagram Tabl.

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STGW45NC60VD www.datasheet4u.com 45 A - 600 V - very fast IGBT Features ■ ■ Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode 3 Applications ■ ■ ■ ■ 2 1 High frequency inverters UPS Motor drivers Induction heating TO-247 long leads Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking GW45NC60VD Package TO-247 long leads Packaging Tube STGW45NC60VD March 2008 Rev 1 1/15 www.st.com 15 Contents STGW45NC60VD Contents 1 www.datasheet4u.com 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 Electrical characteristics (curves) ........................... 7 Frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3 4 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 STGW45NC60VD Electrical ratings 1 www.datasheet4u.com Electrical ratings Table 2. Symbol VCES IC(1) IC (1) ICL (2) ICP (3) VGE IF IFSM PTOT Tj Absolute maximum ratings Parameter Collector-emitter voltage (VGE = 0) Collector current (continuous) at 25 °C Collector current (continuous) at 100 °C Turn-off latching current Pulsed collector current Gate-emitter voltage Diode RMS forward current at TC = 25 °C Surge non repetitive forward current (tp=10 ms sinusoidal) Total dissipation at TC = 25 °C Operating junction temperature Value 600 90 50 220 220 ± 20 30 120 270 – 55 to 150 Unit V A A A A V A A W °C 1. Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------C C R × V (T , I ) THJ – C CESAT ( MAX ) C C 2. Vclamp = 80%(VCES), Tj = 150 °C, RG = 10 Ω, VGE= 15 V 3. Pulse width limited by max. junction temperature allowed Table 3. Symbol Rthj-case Rthj-case Rthj-amb Thermal resistance Parameter Thermal resistance junction-case (IGBT) max Thermal resistance junction-case (diode) max Thermal resistance junction-ambient max Value 0.46 1.5 50 Unit °C/W °C/W °C/W 3/15 Electrical characteristics STGW45NC60VD 2 www.datasheet4u.com Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. Symbol Static Parameter Test conditions Min. Typ. Max. Unit Collector-emitter V(BR)CES breakdown voltage (VGE = 0) VCE(sat) VGE(th) ICES IGES gfs (1) IC = 1 mA 600 V Collector-emitter saturation VGE = 15 V, IC = 30 A voltage VGE = 15 V, IC = 30 A,TC=125 °C Gate threshold voltage Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VCE= VGE, IC=1 mA VCE = 600 V VCE= 600 V, TC = 125 °C VGE = ± 20 V VCE = 15 V, IC= 30 A 3.75 1.8 1.7 2.4 V V V µA mA nA S 5.75 500 5 ±100 20 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 5. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions Min. Typ. Max. 290 0 298 59 126 16 46 Unit pF pF pF nC nC nC VCE = 25 V, f = 1 MHz, VGE= 0 VCE = 390 V, IC = 30 A, VGE = 15 V (see Figure 19) 4/15 STGW45NC60VD Electrical characteristics Table 6. Symbol www.datasheet4u.com Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 390 V, IC = 30 A, RG=10 Ω, VGE = 15 V (see Figure 18) VCC = 390 V, IC = 30 A, RG=10Ω, VGE=15 V TC=125 °C (see Figure 18) VCC = 390 V, IC = 30 A, RG=10 Ω, VGE=15 V (see Figure 18) VCC = 390 V, IC = 30 A, RG=10 Ω, VGE=15 V TC=125 °C (see Figure 18) 33 178 65 68 238 128 ns ns ns ns ns ns Min. Typ. 33 13 2500 32 14 2280 Max. Unit ns ns A/µs ns ns A/µs td(on) tr (di/dt)onf td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Table 7. Symbol Eon (1) Eoff(2) Ets Eon (1) Eoff (2) Ets Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390 V, IC = 30 A , VGE= 15 V, RG= 10 Ω (see Figure 20) VCC = 390 V, IC = 30 A , VGE= 15 V, RG= 10 Ω TC= 125 °C (see Figure 20) Min. Typ. 333 537 870 618 1125 1743 Max. Unit µJ µJ µJ µJ µJ µJ 1. Eon is the turn.


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