Power Transistors
2SC5909
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
■ Features...
Power
Transistors
2SC5909
Silicon
NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
■ Features
15.5±0.5 φ 3.2±0.1 5˚
3.0±0.3 5˚
(4.5)
26.5±0.5 (2.0)
(1.2) (10.0)
(23.4) 22.0±0.5
High breakdown voltage: VCBO ≥ 1 500 V
High-speed switching: tf < 200 ns
Wide safe operation area
5˚
(4.0)
5˚
2.0±0.2
5˚
■ Absolute Maximum Ratings TC = 25°C
1.1±0.1
0.7±0.1
/ Parameter
Symbol Rating
Unit
18.6±0.5 (2.0)
Solder Dip
5.45±0.3
e Collector-base voltage (Emitter open) VCBO
1 500
V
pe) Collector-emitter voltage (E-B short) VCES
1 500
V
nc d ge. ed ty Collector-emitter voltage (Base open) VCEO
600
3.3±0.3
(2.0)
5.5±0.3
V
sta tinu Emitter-base voltage (Collector open) VEBO
7
V
a e cycle iscon Base current
IB
5
A
life , d Collector current
n u duct typed Peak collector current *
IC
15
A
ICP
25
A
te tin Pro ed Collector power dissipation
PC
50
W
four ntinu Ta = 25°C
3
ing isco Junction temperature
Tj
150
°C
in n follow ed d Storage temperature
Tstg −55 to +150 °C
es plan Note) *: Non-repetitive peak collector current
10.9±0.5
5˚ 12 3
1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package
Internal Connection
C B
E
Ma iscocontinueindteinncalnucde type, ■ Electrical Characteristics TC = 25°C ± 3°C
/Dis ma Parameter
Symbol
Conditions
D ance type, Collector-base cutoff current (Emitter open)
Maintentenance Emitter-base cutoff current (Collector open) ain Forward current transfer ratio d m Coll...
