STW43NM60N

STW43NM60N www.datasheet4u.com N-channel 600V - 0.075Ω - 35A - TO-247 second generation MDmesh™ Power MOSFET Preliminary Data Features Type STW43NM60N ■ ■ ■ VDSS (@Tjmax) 650 V RDS(on) max <0.095 Ω ID 35 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 2 3 TO-247 Application ■ Switching applications Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking 43NM60N Package TO-247 Packaging Tube STW43NM60N November 2007 Rev 1 1/9 www.st.com 9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Electrical ratings STW43NM60N 1 www.datasheet4u.com Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 600 ± 25 35 22 140 255 2.04 Tbd –55 to 150 150 Unit V V A A A W W/°C V/ns °C °C PTOT dv/dt (2) Tstg Tj Peak diode recovery voltage slope Storage tem...