GT40Q322

GT40Q322 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT Preliminary www.datasheet4u.com GT40Q322 Unit: mm Voltage Resonance Inverter Switching Application Enhancement-mode High speed : tf = 0.14 µs (typ.) (IC = 40A) FRD included between emitter and collector The 4th generation TO-3P(N) (Toshiba package name) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1200 ±25 20 39 80 10 80 80 200 150 −55 to 150 Unit V V A A A W W °C °C JEDEC JEITA TOSHIBA ― ― 2-16C1C Weight: 4.6 g (typ.) Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.625 1.79 Unit °C/W °C/W Equivalent Circuit Collector Gate Emitter 1 2003-07-07 GT40Q322 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current www.datasheet4u.com Gate-emitter cut-off voltage Symbol IGES ICES VGE (OFF) VCE (sat) Cies Test Condition VGE = ±25 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 40 mA, VCE = 5 V IC = 40 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Resistive Load VCC = 600 V, IC = 40 A VGG = ±15 V, RG = 39 Ω (Note 1) IF = 10 A, VGE = 0 IF = 10 A, di/dt = −20 A/µs Min ― ― 4.0 ― ...