GT40Q322
TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT
Preliminary
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GT40Q322
Uni...
GT40Q322
TOSHIBA Insulated Gate bipolar
Transistor Silicon N Channel IGBT
Preliminary
www.datasheet4u.com
GT40Q322
Unit: mm
Voltage Resonance Inverter Switching Application
Enhancement-mode High speed : tf = 0.14 µs (typ.) (IC = 40A) FRD included between emitter and collector The 4th generation TO-3P(N) (Toshiba package name)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1200 ±25 20 39 80 10 80 80 200 150 −55 to 150 Unit V V A A A W W °C °C
JEDEC JEITA TOSHIBA
― ― 2-16C1C
Weight: 4.6 g (typ.)
Thermal Characteristics
Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.625 1.79 Unit °C/W °C/W
Equivalent Circuit
Collector
Gate Emitter
1
2003-07-07
GT40Q322
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Collector cut-off current
www.datasheet4u.com Gate-emitter cut-off voltage
Symbol IGES ICES VGE (OFF) VCE (sat) Cies
Test Condition VGE = ±25 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 40 mA, VCE = 5 V IC = 40 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Resistive Load VCC = 600 V, IC = 40 A VGG = ±15 V, RG = 39 Ω (Note 1) IF = 10 A, VGE = 0 IF = 10 A, di/dt = −20 A/µs
Min ― ― 4.0 ― ...