Silicon Junction FETs
XIAOSHENG
Symbol:
Drain
LH03 Series of Products interconvert:
www.datasheet4u.com
2SK30A
Gate...
Silicon Junction FETs
XIAOSHENG
Symbol:
Drain
LH03 Series of Products interconvert:
www.datasheet4u.com
2SK30A
Gate
Source
Silicon N-Chinnel Junction FET
Application:
For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC ,electronic switch.
Package example:
Absolute Maximum Ratings (Ta=25℃)
Parameter Gate to Drain voltage Gate to Source voltage Gate current Allowable power dissipation Junction Temperature Storage Temperature Symbol VGDO VGSO IG PD Tj Tstg Ratings -50 -50 10 250 125 -55 to +125 Unit V V mA mW ℃ ℃ * Package
SC-59 SOT-23 TO-92S TO-92 TO-18
D
S
G
3
1
2
Electrical Characteristics (Ta=25℃) Prameter Symbol Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittamce
Input capacitance (Common Source) Reverse transfer capacitance (Common Source)
Conditions VDS = 10V, VGS = 0V VGS= -30V, VDS = 0V IG = -100μA,VDS = 0V VDS = 10V, ID = 0.1μA VDS= 10V, VGS= 0V, f = 1KHZ VDS= 10V, VGS= 0V, f = 1MHZ
min 0.3 -50 -0.4 1.2
typ
max 6.5 -1.0 -5.0
Unit mA nA V V mS pF pF
IDSS IGSS VGDS VGS(OFF) | Yfs | Ciss Crss
8.2 2.6
IDSS Rank Classification
Runk IDSS(mA) Marking Symbol R 0.3 to 0.75 035D O 0.6 to 1.4 035E Y 1.2 to 3.0 035F GR 2.6 to 6.5 035G
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