16 Megabit FlashBank Memory
16 Megabit FlashBank Memory
LE28DW1621T-80T (Draft3)
FEATURES:
1
Sp ec ifi ca tio ns
• • • • • • • • •
• Single 3.0-V...
Description
16 Megabit FlashBank Memory
LE28DW1621T-80T (Draft3)
FEATURES:
1
Sp ec ifi ca tio ns
Single 3.0-Volt Read and Write Operations Separate Memory Banks by Address Space
– Bank1: 4Mbit (256K x 16 / 512K x 8) Flash – Bank2: 12Mbit (768K x 16 / 1536K x 8) Flash – Simultaneous Read and Write Capability
Read Access Time – 80 ns Latched Address and Data End of Write Detection – Toggle Bit / Data # Polling / RY/BY# Write Protection by WP# pin Erase Verify Mode Flash Bank: Two Small Erase Element Sizes – 1K Words per Sector or 32K Words per Block – Erase either element before Word Program CMOS I/O Compatibility Packages Available – 48-Pin TSOP (12mm x 20mm) Continuous Hardware and Software Data Protection (SDP)
Superior Reliability
– Endurance:
100,000 Cycles (Erase Verify Mode) 10,000 Cycles – Data Retention: 10 years
Low Power Consumption
– – – – Active Current, Read: Active Current, Read & Write: Standby Current: Auto Low Power Mode Current: 10 mA (typical) 30 mA (typical) 5µA (typical) 5µA (typical)
Fast Write Operation
– Chip Erase + Program: – Block Erase + Program: – Sector Erase + Program: 15 sec (typical) 500 ms (typical) 30 ms (typical)
Fixed Erase, Program, Write Times
– Does not change after cycling
Product Description The LE28DW1621T consists of two memory banks, Bank1 is a 256K x 16 bits or 512K x 8 sector mode flash EEPROM and Bank2 is a 768K x 16 bits or 1536K x 8 sector mode flash EEPROM, manufactured with SANYO's proprietary, hig...
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