LE28DW1621T

16 Megabit FlashBank Memory LE28DW1621T-80T (Draft3) FEATURES: 1 Sp ec ifi ca tio ns Single 3.0-Volt Read and Write Operations Separate Memory Banks by Address Space – Bank1: 4Mbit (256K x 16 / 512K x 8) Flash – Bank2: 12Mbit (768K x 16 / 1536K x 8) Flash – Simultaneous Read and Write Capability Read Access Time – 80 ns Latched Address and Data End of Write Detection – Toggle Bit / Data # Polling / RY/BY# Write Protection by WP# pin Erase Verify Mode Flash Bank: Two Small Erase Element Sizes – 1K Words per Sector or 32K Words per Block – Erase either element before Word Program CMOS I/O Compatibility Packages Available – 48-Pin TSOP (12mm x 20mm) Continuous Hardware and Software Data Protection (SDP) Superior Reliability – Endurance: 100,000 Cycles (Erase Verify Mode) 10,000 Cycles – Data Retention: 10 years Low Power Consumption – – – – Active Current, Read: Active Current, Read & Write: Standby Current: Auto Low Power Mode Current: 10 mA (typical) 30 mA (typical) 5µA (typical) 5µA (typical) Fast Write Operation – Chip Erase + Program: – Block Erase + Program: – Sector Erase + Program: 15 sec (typical) 500 ms (typical) 30 ms (typical) Fixed Erase, Program, Write Times – Does not change after cycling Product Description The LE28DW1621T consists of two memory banks, Bank1 is a 256K x 16 bits or 512K x 8 sector mode flash EEPROM and Bank2 is a 768K x 16 bits or 1536K x 8 sector mode flash EEPROM, manufactured with SANYO's proprietary, hig...