LE28C1001T

Ordering number : EN*5129A CMOS LSI LE28C1001M, T-90/12/15 1MEG (131072 words × 8 bits) Flash Memory Preliminary Overview The LE28C1001M, T series ICs are 1 MEG flash memory products that feature a 131072-word × 8-bit organization and 5 V single-voltage power supply operation. CMOS peripheral circuits are adopted for high speed, low power dissipation, and ease of use. A 128-byte page rewrite function provides rapid data rewriting. Package Dimensions unit: mm 3205-SOP32 [LE28C1001M] Features Highly reliable 2-layer polysilicon CMOS flash EEPROM process Read and write operations using a 5 V single-voltage power supply Fast access time: 90, 120, and 150 ns Low power dissipation — Operating current (read): 30 mA (maximum) — Standby current: 20 µA (maximum) Highly reliable read/write — Erase/write cycles: 104/103 cycles — Data retention: 10 years Address and data latches Fast page rewrite operation — 128 bytes per page — Byte/page rewrite time: 5 ms (typical) — Chip rewrite time: 5 s (typical) Automatic rewriting using internally generated Vpp Rewrite complete detection function — Toggle bit — Data polling Hardware and software data protection functions All inputs and outputs are TTL compatible. Pin assignment conforms to the JEDEC byte-wide EEPROM standard. Package SOP 32-pin (525 mil) plastic package : LE28C1001M TSOP 32-pin (8 × 20 mm)plastic package : LE28C1001T SANYO: SOP32 unit: mm 3224-TSOP32 [LE28C1001T] SANYO: TSOP32 (TYPE-I) These FLASH ...