TIP41D

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors TIP41D/41E/41F www.datasheet4u.com DESCRIPTION ·With TO-220C package ·Complement to type TIP42D/42E/42F APPLICATIONS ·For medium power linear switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER TIP41D VCBO Collector-base voltage TIP41E TIP41F TIP41D VCEO Collector-emitter voltage TIP41E TIP41F VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current (DC) Collector current-Pulse Base current TC=25 Collector power dissipation Ta=25 Junction temperature Storage temperature 2 150 -65~150 Open collector Open base Open emitter CONDITIONS VALUE 160 180 200 120 140 160 5 6 10 3 65 W V A A A V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER TIP41D VCEO(SUS) Collector-emitter sustaining voltage TIP41E TIP41F VCE(sat) VBE Collector-emitter saturation voltage Base-emitter on voltage TIP41D ICES Collector cut-off current TIP41E TIP41F ICEO IEBO hFE-1 hFE-2 fT Collector cut-off current IC=6A; IB=1.5A IC=6A ; VCE=4V VCE=120V; VEB=0 VCE=140V; VEB=0 VCE=160V; VEB=0 VCE=90V; IB=0 VEB=5V; IC=0 IC=0.3A ; VCE=4V IC=3A ; VCE=4V IC=0.5A ; VCE=10V IC=30mA; IB=0 CONDITIONS www.datasheet4u.com TIP41D/41E/41F SYMBOL MIN 120 140 160 TYP. MAX UNIT V 1.5 2.0 V V 0.4 mA 0.7 1.0 30 15 3 mA mA Emitter cut-off curr...