MJE18006

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE18006 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·High voltage ,high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1000 450 9 6 15 4 8 100 150 -65~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C Rth j-A PARAMETER Thermal resistance junction to case Thermal resistance junction to ambient MAX 1.25 62.5 UNIT /W /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=0.1A; L=25mH IC=1.5A ;IB=0.15A TC=125 IC=3A ;IB=0.6A TC=125 IC=1.5A; IB=0.15A IC=3A; IB=0.6A VCES=RatedVCES; VEB=0 TC=125 VCES=800V ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT COB Collector cut-off current Emitter cut-off current DC current ga...